Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates
Identifieur interne : 000079 ( Main/Repository ); précédent : 000078; suivant : 000080Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates
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Abstract
Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates</title><author><name>GUODONG WU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanjing University, School of Electronic Science and Engineering</s1><s2>Nanjing 210093, Jiangsu</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanjing 210093, Jiangsu</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences</s1><s2>Ningbo, 315201</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo, 315201</wicri:noRegion></affiliation></author><author><name>CHANGJIN WAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanjing University, School of Electronic Science and Engineering</s1><s2>Nanjing 210093, Jiangsu</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanjing 210093, Jiangsu</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences</s1><s2>Ningbo, 315201</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo, 315201</wicri:noRegion></affiliation></author><author><name>JUMEI ZHOU</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences</s1><s2>Ningbo, 315201</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo, 315201</wicri:noRegion></affiliation></author><author><name>LIQIANG ZHU</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences</s1><s2>Ningbo, 315201</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo, 315201</wicri:noRegion></affiliation></author><author><name>QING WAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanjing University, School of Electronic Science and Engineering</s1><s2>Nanjing 210093, Jiangsu</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Nanjing 210093, Jiangsu</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences</s1><s2>Ningbo, 315201</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo, 315201</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0095971</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0095971 INIST</idno><idno type="RBID">Pascal:14-0095971</idno><idno type="wicri:Area/Main/Corpus">000028</idno><idno type="wicri:Area/Main/Repository">000079</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bioelectronics</term><term>Electrolyte</term><term>Indium oxide</term><term>Lamellar structure</term><term>Plasticity</term><term>Thin film</term><term>Thin film transistor</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Transistor couche mince</term><term>Structure lamellaire</term><term>Electrolyte</term><term>Couche mince</term><term>Plasticité</term><term>Bioélectronique</term><term>8535</term><term>8530T</term><term>6225</term><term>8565</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO<sub>2</sub> electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>25</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Papers electronics</s1></fA09><fA11 i1="01" i2="1"><s1>GUODONG WU</s1></fA11><fA11 i1="02" i2="1"><s1>CHANGJIN WAN</s1></fA11><fA11 i1="03" i2="1"><s1>JUMEI ZHOU</s1></fA11><fA11 i1="04" i2="1"><s1>LIQIANG ZHU</s1></fA11><fA11 i1="05" i2="1"><s1>QING WAN</s1></fA11><fA12 i1="01" i2="1"><s1>ÖSTERBACKA (Ronald)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>HAN (Jin-Woo)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Nanjing University, School of Electronic Science and Engineering</s1><s2>Nanjing 210093, Jiangsu</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences</s1><s2>Ningbo, 315201</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>Department of Physics, Abo Akademi University, Porthansgaten 3</s1><s2>20500 Turku</s2><s3>FIN</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Department of Physics and Astronomy, Center for Nanotechnology, NASA Ames Research Centre, M/S 229-1</s1><s2>Moffett Field, CA 94035</s2><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA20><s2>094001.1-094001.7</s2></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000501126800020</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0095971</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO<sub>2</sub> electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. 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